吴征远

发布时间:2023-10-16浏览次数:10

吴征远

职称:青年副研究员

电子邮箱:zhengyuanwu@fudan.edu.cn

办公地址:复旦大学(邯郸校区)科学楼

 

学习工作经历:

2023.7至今,复旦大学,光电研究院,青年副研究员

2019.6-2023.6,复旦大学,工程与应用技术研究院,博士后

2013.9-2019.6,厦门大学,物理系,博士

2008.9-2012.6,厦门大学,物理系,学士


研究方向:

宽禁带半导体材料与器件

  

科研项目:

科技部十四五国家重点研发计划(2022),在研,参与

科技部十四五国家重点研发计划(2021),在研,参与

国家自然科学基金委员会青年科学基金项目,在研,主持

国家自然科学基金面上项目,在研,参与

中国博士后科学基金会创新人才支持计划,结题,主持

中国博士后科学基金会面上项目,结题,主持

上海市人力资源和社会保障局超级博士后激励计划,结题,主持

  

论文专利:

H. J. Li, Z. Y. Wu*, P. F. Tian, J.C. Li, J. Y. Kang, G. Q. Zhang, Z. L. Fang*, AlInGaN nanocrystal seeded growth of weak p-type β-(In0.1Ga0.9)2O3 nanowires and nanobelts, CrystEngComm 25, 36743681(2023).


C. C. Ma, Z. Y. Wu, H. Zhang, H. Y. Zhu, J. Y. Kang, J. H. Chu, Z. L. Fang*, P-type nitrogen-doped β-Ga2O3: the role of stable shallow acceptor NOVGa complexes, Physical Chemistry Chemical Physics 25, 1376613771 (2023). 


 H. J. Li, Z. Y. Wu*, S. Y. Wu, P. F. Tian, Z. L. Fang*, (AlxGa1-x)2O3-based materials: Growth, properties, and device applications, Journal of Alloys and Compounds 960, 170671 (2023).


 H. C. Zhai, Z. Y. Wu*, Z. L. Fang*, Recent progress of Ga2O3-based gas sensors, Ceramics International 48, 24213 (2022).


C. C. Ma, Z. Y. Wu, Z. X. Jiang, Y. Chen, W. Ruan, H. Zhang*, H. Y. Zhu, G. Q. Zhang, J. Y. Kang, T.-Y. Zhang, J. H. Chu, Z. L. Fang*, Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility, Journal of Materials Chemistry C 10, 6673 (2022).


W. Ruan, Z. Y. Wu*, J. Liu, J. Chen, Y. B. Shan, P. Y. Song, Z. X. Jiang, R. Liu, G. Q. Zhang, Z. L. Fang*, β-Ga2O3 nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application, Journal of Physics D: Applied Physics 55, 284001 (2022).


Z. Y. Wu, Z. X. Jiang, C. C. Ma, W. Ruan, Y. Chen, H. Zhang, G. Q. Zhang, Z. L. Fang*, J. Y. Kang, and T.-Y. Zhang, Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films, Materials Today Physics 17, 100356 (2021).


P. Yang, H. F. Yang, Z. Y. Wu et al., Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices, ACS Applied Nano Materials 4, 1212712136 (2021).


Z. X. Jiang, Z. Y. Wu, C. C. Ma, J. N. Deng, H. Zhang, Y. Xu, J. D. Ye, Z. L. Fang*, G. Q. Zhang, J. Y. Kang, and T.-Y. Zhang, P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product, Materials Today Physics 14, 100226 (2020).


Z. Y. Wu, Z. X. Jiang, P. Y. Song, P. F. Tian, L. G. Hu, R. Liu, Z. L. Fang*, J. Y. Kang, and T.-Y. Zhang, Nanowire-seeded growth of single-crystalline (010) β-Ga2O3 nanosheets with high field-effect electron mobility and on/off current ratio, Small 15, 1900580 (2019).


Z. Y. Wu, Z. X. Jiang, S. Q. Lu, J. C. Li, R. Liu, J. Y. Kang, and Z. L. Fang*, Semipolar () GaN Films Improved by in situ SiNx Pretreatment of m-Sapphire Substrate Surface, Phys. Status Solidi A 216, 1900001 (2019).


Z. Y. Wu, S. Q. Lu, P. Yang, P. F. Tian, L. G. Hu, R. Liu, J. Y. Kang, and Z. L. Fang*, Green-Amber Emission from High Indium Content InGaN Quantum Wells on Interface-Modified Semipolar () GaN Templates, CrystEngComm 21, 244250 (2019).


X. Y. Shen, Z. Y. Wu, J. C. Li, J. Y. Kang, and Z. L. Fang*, Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripe, Journal of Alloys and Compounds 775, 752757 (2019).


一种半极性镓氮外延片及其制备方法,ZL201811255304.7


一种大尺寸单晶氧化镓纳米片的制备方法,ZL201810794203.0


基于GaN条纹模板的多色发光InGaN量子阱外延片的制备方法,ZL201810887536.8