朱凯晨
复旦大学光电研究院青年研究员，博士生导师，国家及上海市海外高层次青年人才。
研究领域聚焦新型电子器件与集成技术，重点研究方向包括新型存储与存内运算，h-BN基忆阻器和h-BN栅控晶体管及其异质集成，致力于通过材料-器件-电路协同创新，推动先进计算架构发展。参与2项国家重点研发计划，发表学术论文35篇，包括Nature（2篇），Nature Electronics（2篇），Nature Reviews Materials等，其中高被引4篇，总被引2200余次，h指数19。担任Nature Communications，Advanced Materials和Materials Science & Engineering等期刊审稿人。
更多信息请访问个人主页：https://faculty.fudan.edu.cn/ZHUKAICHEN/zh_CN/index.htm
教育背景及工作经历：
2025.03至今：复旦大学光电研究院，青年研究员
2023.08~2025.01 沙特阿拉伯阿卜杜拉国王科技大学，博士后
2020.07~2023.02 西班牙巴塞罗那大学，博士，Excellent Cum Laude荣誉
2013.09~2020.06 苏州大学，学士硕士
代表性论文：
1. K. Zhu†, S. Pazos†, F. Aguirre, Y. Shen, Y. Yuan, W. Zheng, O. Alharbi, M. A. Villena, B. Fang, X. Li, A. Milozzi, M. Farronato, M. Muñoz-Rojo, T. Wang, R. Li, H. Fariborzi, J. B. Roldan, G. Benstetter, X. Zhang, H. Alshareef, T. Grasser, H. Wu, D. Ielmini, M. Lanza*, Hybrid 2D/CMOS microchips for memristive applications, Nature 618, 57-62, 2023. 高被引论文
2. K. Zhu, C. Wen, A. A. Aljarb, F. Xue, X. Xu, V. Tung, X. Zhang, H. N. Alshareef, M. Lanza*, The development of integrated circuits based on two-dimensional materials, Nature Electronics 4, 775-785, 2021. 高被引论文
3. K. Zhu, B. Yuan, X. Liang, X. Jing, C. Wen, M. A. Villena, M. Lanza*, Graphene-boron nitride-graphene cross-point memristors with three stable resistive states, ACS Applied Materials & Interfaces 11, 37999-38005, 2019.
4. K. Zhu, M. R. Mahmoodi, Z. Fahimi, Y. Xiao, T. Wang, K. Bukvišová, M. Kolíbal, J. B. Roldan, D. Perez, F. Aguirre, M. Lanza*, Memristors with initial low-resistive state for efficient neuromorphic systems, Advanced Intelligent Systems 2200001, 2022.
5. K. Zhu, G. Vescio, S. González-Torres, J. López-Vidrier, J. Luis Frieiro, S. Pazos, X. Jing, X. Gao, Sui-Dong Wang, J. Ascorbe-Muruzábal, J. A. Ruiz-Fuentes, A. Cirera, B. Garrido, M. Lanza*, Inkjet-printed h-BN memristors for hardware security, Nanoscale 15, 9985-9992, 2023.
6. S. Pazos, K. Zhu, M. A. Villena, O. Alharbi, W. Zheng, Y. Shen, Y. Yuan, Y. Ping, M. Lanza*. Synaptic and neural behaviors in a standard silicon transistor. Nature 640, 69-76, 2025.
7. Y. Shen, K. Zhu, Y. Xiao, D. Waldhör, A. H. Basher, T. Knobloch, S. Pazos, X. Liang, W. Zheng, Y. Yuan, J. B. Roldan, U. Schwingenschlögl, H. Tian, H. Wu, T. F. Schranghamer, N. Trainor, J. M. Redwing, S. Das, T. Grasser, M. Lanza*, Two-dimensional Materials based Transistors using Hexagonal Boron Nitride Dielectrics and Metal Gate Electrodes with High Cohesive Energy, Nature Electronics 7, 856-867, 2024.
8. S. Pazos, X. Xu, T. Guo, K. Zhu, H. N. Alshareef, M. Lanza*, Solution-processed memristors: performance and reliability, Nature Reviews Materials 9, 358-373, 2024.
