吴征远

职称：青年副研究员

电子邮箱：zhengyuanwu@fudan.edu.cn

办公地址：复旦大学(邯郸校区)科学楼

学习工作经历：

2023.7至今，复旦大学，光电研究院，青年副研究员

2019.6-2023.6，复旦大学，工程与应用技术研究院，博士后

2013.9-2019.6，厦门大学，物理系，博士

2008.9-2012.6，厦门大学，物理系，学士

研究方向：

宽禁带半导体材料与器件

科研项目：

科技部“十四五”国家重点研发计划(2022年)，在研，参与

科技部“十四五”国家重点研发计划(2021年)，在研，参与

国家自然科学基金委员会青年科学基金项目，在研，主持

国家自然科学基金面上项目，在研，参与

中国博士后科学基金会创新人才支持计划，结题，主持

中国博士后科学基金会面上项目，结题，主持

上海市人力资源和社会保障局超级博士后激励计划，结题，主持

论文专利：

H. J. Li, Z. Y. Wu*, P. F. Tian, J.C. Li, J. Y. Kang, G. Q. Zhang, Z. L. Fang*, AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts, CrystEngComm 25, 3674−3681(2023).

C. C. Ma, Z. Y. Wu, H. Zhang, H. Y. Zhu, J. Y. Kang, J. H. Chu, Z. L. Fang*, P-type nitrogen-doped β-Ga₂O₃: the role of stable shallow acceptor N_O–V_Ga complexes, Physical Chemistry Chemical Physics 25, 13766−13771 (2023). 

 H. J. Li, Z. Y. Wu*, S. Y. Wu, P. F. Tian, Z. L. Fang*, (Al_xGa_1-x)₂O₃-based materials: Growth, properties, and device applications, Journal of Alloys and Compounds 960, 170671 (2023).

 H. C. Zhai, Z. Y. Wu*, Z. L. Fang*, Recent progress of Ga₂O₃-based gas sensors, Ceramics International 48, 24213 (2022).

C. C. Ma^†, Z. Y. Wu^†, Z. X. Jiang, Y. Chen, W. Ruan, H. Zhang*, H. Y. Zhu, G. Q. Zhang, J. Y. Kang, T.-Y. Zhang, J. H. Chu, Z. L. Fang*, Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility, Journal of Materials Chemistry C 10, 6673 (2022).

W. Ruan, Z. Y. Wu*, J. Liu, J. Chen, Y. B. Shan, P. Y. Song, Z. X. Jiang, R. Liu, G. Q. Zhang, Z. L. Fang*, β-Ga₂O₃ nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application, Journal of Physics D: Applied Physics 55, 284001 (2022).

Z. Y. Wu, Z. X. Jiang, C. C. Ma, W. Ruan, Y. Chen, H. Zhang, G. Q. Zhang, Z. L. Fang*, J. Y. Kang, and T.-Y. Zhang, Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga₂O₃ films, Materials Today Physics 17, 100356 (2021).

P. Yang, H. F. Yang, Z. Y. Wu et al., Large-Area Monolayer MoS₂ Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices, ACS Applied Nano Materials 4, 12127–12136 (2021).

Z. X. Jiang^†, Z. Y. Wu^†, C. C. Ma, J. N. Deng, H. Zhang, Y. Xu, J. D. Ye, Z. L. Fang*, G. Q. Zhang, J. Y. Kang, and T.-Y. Zhang, P-type β-Ga₂O₃ metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product, Materials Today Physics 14, 100226 (2020).

Z. Y. Wu^†, Z. X. Jiang^†, P. Y. Song, P. F. Tian, L. G. Hu, R. Liu, Z. L. Fang*, J. Y. Kang, and T.-Y. Zhang, Nanowire-seeded growth of single-crystalline (010) β-Ga₂O₃ nanosheets with high field-effect electron mobility and on/off current ratio, Small 15, 1900580 (2019).

Z. Y. Wu, Z. X. Jiang, S. Q. Lu, J. C. Li, R. Liu, J. Y. Kang, and Z. L. Fang*, Semipolar () GaN Films Improved by in situ SiN_x Pretreatment of m-Sapphire Substrate Surface, Phys. Status Solidi A 216, 1900001 (2019).

Z. Y. Wu, S. Q. Lu, P. Yang, P. F. Tian, L. G. Hu, R. Liu, J. Y. Kang, and Z. L. Fang*, Green-Amber Emission from High Indium Content InGaN Quantum Wells on Interface-Modified Semipolar () GaN Templates, CrystEngComm 21, 244−250 (2019).

X. Y. Shen, Z. Y. Wu, J. C. Li, J. Y. Kang, and Z. L. Fang*, Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripe, Journal of Alloys and Compounds 775, 752−757 (2019).

一种半极性镓氮外延片及其制备方法，ZL201811255304.7

一种大尺寸单晶氧化镓纳米片的制备方法，ZL201810794203.0

基于GaN条纹模板的多色发光InGaN量子阱外延片的制备方法，ZL201810887536.8